Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Series
BSC026N08NS5
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
74 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
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BD 1.275
Each (In a Pack of 10) (Exc. Vat)
BD 1.403
Each (In a Pack of 10) (Including VAT)
10
BD 1.275
Each (In a Pack of 10) (Exc. Vat)
BD 1.403
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 1.275 | BD 12.750 |
100 - 490 | BD 1.085 | BD 10.850 |
500 - 990 | BD 0.955 | BD 9.550 |
1000 - 2490 | BD 0.830 | BD 8.300 |
2500+ | BD 0.810 | BD 8.100 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Series
BSC026N08NS5
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
74 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V