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SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1

RS Stock No.: 234-8965Brand: InfineonManufacturers Part No.: F423MR12W1M1B76BPSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY1B-2

Series

F4

Mounting Type

Chassis Mount

Maximum Drain Source Resistance

0.0225 Ω

Maximum Gate Threshold Voltage

5.55V

Transistor Material

SiC

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BD 57.425

Each (Exc. Vat)

BD 63.167

Each (inc. VAT)

SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 57.425
2BD 114.850
3BD 172.275
4BD 229.700
5BD 285.575
6BD 342.690
7BD 399.805
8BD 456.920
9BD 514.035
10BD 568.400
11BD 625.240
12BD 682.080
13BD 738.920
14BD 795.760
15BD 848.400

BD 57.425

Each (Exc. Vat)

BD 63.167

Each (inc. VAT)

SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 57.425
2BD 114.850
3BD 172.275
4BD 229.700
5BD 285.575
6BD 342.690
7BD 399.805
8BD 456.920
9BD 514.035
10BD 568.400
11BD 625.240
12BD 682.080
13BD 738.920
14BD 795.760
15BD 848.400

Buy in bulk

quantityUnit price
1 - 4BD 57.425
5 - 9BD 57.115
10 - 14BD 56.840
15 - 19BD 56.560
20+BD 56.265

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY1B-2

Series

F4

Mounting Type

Chassis Mount

Maximum Drain Source Resistance

0.0225 Ω

Maximum Gate Threshold Voltage

5.55V

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more