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Infineon 1200V 22.8A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH08G120C5XKSA1

RS Stock No.: 133-8555Brand: InfineonManufacturers Part No.: IDH08G120C5XKSA1
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Technical Document

Specifications

Brand

Infineon

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

22.8A

Peak Reverse Repetitive Voltage

1200V

Diode Configuration

Single

Rectifier Type

Schottky Diode

Diode Type

SiC Schottky

Pin Count

2 + Tab

Maximum Forward Voltage Drop

2.85V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

70A

Country of Origin

Malaysia

Product details

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI

Diodes and Rectifiers, Infineon

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BD 0.825

Each (In a Tube of 500) (Exc. Vat)

BD 0.907

Each (In a Tube of 500) (inc. VAT)

Infineon 1200V 22.8A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH08G120C5XKSA1

500

Available in multiples of 500
500BD 412.500
1000BD 825.000
1500BD 1,237.500
2000BD 1,650.000
2500BD 2,062.500
3000BD 2,475.000
3500BD 2,887.500
4000BD 3,300.000
4500BD 3,712.500
5000BD 4,125.000
5500BD 4,537.500
6000BD 4,950.000
6500BD 5,362.500
7000BD 5,775.000
7500BD 6,187.500

BD 0.825

Each (In a Tube of 500) (Exc. Vat)

BD 0.907

Each (In a Tube of 500) (inc. VAT)

Infineon 1200V 22.8A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH08G120C5XKSA1
Stock information temporarily unavailable.

500

Available in multiples of 500
500BD 412.500
1000BD 825.000
1500BD 1,237.500
2000BD 1,650.000
2500BD 2,062.500
3000BD 2,475.000
3500BD 2,887.500
4000BD 3,300.000
4500BD 3,712.500
5000BD 4,125.000
5500BD 4,537.500
6000BD 4,950.000
6500BD 5,362.500
7000BD 5,775.000
7500BD 6,187.500

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

22.8A

Peak Reverse Repetitive Voltage

1200V

Diode Configuration

Single

Rectifier Type

Schottky Diode

Diode Type

SiC Schottky

Pin Count

2 + Tab

Maximum Forward Voltage Drop

2.85V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

70A

Country of Origin

Malaysia

Product details

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI

Diodes and Rectifiers, Infineon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more