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Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 50 A, 650 V, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1

RS Stock No.: 284-723Brand: InfineonManufacturers Part No.: IMT65R048M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 6.006

BD 6.006 Each (Exc. Vat)

BD 6.607

BD 6.607 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 50 A, 650 V, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 6.006
2BD 12.012
3BD 18.018
4BD 24.024
5BD 30.030
6BD 36.036
7BD 42.042
8BD 48.048
9BD 54.054
10BD 55.220
11BD 60.742
12BD 66.264
13BD 71.786
14BD 77.308
15BD 82.830

BD 6.006

BD 6.006 Each (Exc. Vat)

BD 6.607

BD 6.607 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 50 A, 650 V, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 6.006
2BD 12.012
3BD 18.018
4BD 24.024
5BD 30.030
6BD 36.036
7BD 42.042
8BD 48.048
9BD 54.054
10BD 55.220
11BD 60.742
12BD 66.264
13BD 71.786
14BD 77.308
15BD 82.830

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 9BD 6.006
10 - 99BD 5.522
100+BD 5.192

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more