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Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1

RS Stock No.: 284-726Brand: InfineonManufacturers Part No.: IMT65R057M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 5.682

BD 5.682 Each (Exc. Vat)

BD 6.250

BD 6.250 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 5.682
2BD 11.363
3BD 17.044
4BD 22.726
5BD 28.408
6BD 34.089
7BD 39.770
8BD 45.452
9BD 51.134
10BD 52.305
11BD 57.536
12BD 62.766
13BD 67.996
14BD 73.227
15BD 78.458

BD 5.682

BD 5.682 Each (Exc. Vat)

BD 6.250

BD 6.250 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 5.682
2BD 11.363
3BD 17.044
4BD 22.726
5BD 28.408
6BD 34.089
7BD 39.770
8BD 45.452
9BD 51.134
10BD 52.305
11BD 57.536
12BD 62.766
13BD 67.996
14BD 73.227
15BD 78.458

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 9BD 5.682
10 - 99BD 5.230
100 - 499BD 4.917
500 - 999BD 4.653
1000+BD 4.268

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more