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Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1

RS Stock No.: 232-0396Brand: InfineonManufacturers Part No.: IMW65R083M1HXKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolSiC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.111 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Transistor Material

Silicon

Number of Elements per Chip

1

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Stock information temporarily unavailable.

BD 80.850

BD 2.695 Each (In a Tube of 30) (Exc. Vat)

BD 88.935

BD 2.965 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1

30

Available in multiples of 30
30BD 80.850
60BD 153.780
90BD 230.670
120BD 307.560
150BD 363.000
180BD 435.600
210BD 508.200
240BD 580.800
270BD 653.400
300BD 726.000
330BD 798.600
360BD 871.200
390BD 943.800
420BD 1,016.400
450BD 1,089.000

BD 80.850

BD 2.695 Each (In a Tube of 30) (Exc. Vat)

BD 88.935

BD 2.965 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1
Stock information temporarily unavailable.

30

Available in multiples of 30
30BD 80.850
60BD 153.780
90BD 230.670
120BD 307.560
150BD 363.000
180BD 435.600
210BD 508.200
240BD 580.800
270BD 653.400
300BD 726.000
330BD 798.600
360BD 871.200
390BD 943.800
420BD 1,016.400
450BD 1,089.000

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
30 - 30BD 2.695BD 80.850
60 - 120BD 2.563BD 76.890
150+BD 2.420BD 72.600

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolSiC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.111 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Transistor Material

Silicon

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more