Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB013N06NF2SATMA1

RS Stock No.: 262-5848PBrand: InfineonManufacturers Part No.: IPB013N06NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

190 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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BD 1.600

Each (Supplied on a Reel) (Exc. Vat)

BD 1.760

Each (Supplied on a Reel) (Including VAT)

Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB013N06NF2SATMA1
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2BD 3.200
4BD 6.400
6BD 9.600
8BD 12.800
10BD 16.000
12BD 19.200
14BD 22.400
16BD 25.600
18BD 28.800
20BD 28.800
22BD 31.680
24BD 34.560
26BD 37.440
28BD 40.320
30BD 43.200

BD 1.600

Each (Supplied on a Reel) (Exc. Vat)

BD 1.760

Each (Supplied on a Reel) (Including VAT)

Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB013N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2BD 3.200
4BD 6.400
6BD 9.600
8BD 12.800
10BD 16.000
12BD 19.200
14BD 22.400
16BD 25.600
18BD 28.800
20BD 28.800
22BD 31.680
24BD 34.560
26BD 37.440
28BD 40.320
30BD 43.200

Buy in bulk

quantityUnit pricePer Reel
2 - 18BD 1.600BD 3.200
20 - 48BD 1.440BD 2.880
50 - 98BD 1.345BD 2.690
100 - 198BD 1.250BD 2.500
200+BD 1.170BD 2.340

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

190 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more