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Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1

RS Stock No.: 262-5857PBrand: InfineonManufacturers Part No.: IPB023N04NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

122 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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BD 0.675

Each (Supplied on a Reel) (Exc. Vat)

BD 0.743

Each (Supplied on a Reel) (inc. VAT)

Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50BD 33.750
55BD 37.125
60BD 40.500
65BD 43.875
70BD 47.250
75BD 50.625
80BD 54.000
85BD 57.375
90BD 60.750
50BD 33.750
55BD 37.125
60BD 40.500
65BD 43.875
70BD 47.250
75BD 50.625

BD 0.675

Each (Supplied on a Reel) (Exc. Vat)

BD 0.743

Each (Supplied on a Reel) (inc. VAT)

Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50BD 33.750
55BD 37.125
60BD 40.500
65BD 43.875
70BD 47.250
75BD 50.625
80BD 54.000
85BD 57.375
90BD 60.750
50BD 33.750
55BD 37.125
60BD 40.500
65BD 43.875
70BD 47.250
75BD 50.625

Buy in bulk

quantityUnit pricePer Reel
50 - 120BD 0.675BD 3.375
125 - 245BD 0.640BD 3.200
250 - 495BD 0.610BD 3.050
500+BD 0.575BD 2.875

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

122 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more