Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
Transistor Material
Si
BD 4.015
BD 2.008 Each (In a Pack of 2) (Exc. Vat)
BD 4.417
BD 2.209 Each (In a Pack of 2) (inc. VAT)
Standard
2
BD 4.015
BD 2.008 Each (In a Pack of 2) (Exc. Vat)
BD 4.417
BD 2.209 Each (In a Pack of 2) (inc. VAT)
Standard
2
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
Transistor Material
Si