Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Series
OptiMOS™-T
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Width
10.25mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.4mm
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BD 2.350
Each (Supplied on a Reel) (Exc. Vat)
BD 2.585
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
BD 2.350
Each (Supplied on a Reel) (Exc. Vat)
BD 2.585
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
10 - 20 | BD 2.350 | BD 11.750 |
25 - 45 | BD 2.220 | BD 11.100 |
50 - 120 | BD 2.085 | BD 10.425 |
125+ | BD 1.975 | BD 9.875 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Series
OptiMOS™-T
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Width
10.25mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.4mm