Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Series
IPD068N10N3 G
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Width
7.47mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.41mm
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BD 0.475
Each (In a Pack of 10) (Exc. Vat)
BD 0.523
Each (In a Pack of 10) (Including VAT)
10
BD 0.475
Each (In a Pack of 10) (Exc. Vat)
BD 0.523
Each (In a Pack of 10) (Including VAT)
10
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Series
IPD068N10N3 G
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Width
7.47mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.41mm