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Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK IPI80N06S4L07AKSA2

RS Stock No.: 214-9068Brand: InfineonManufacturers Part No.: IPI80N06S4L07AKSA2
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.0067 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Si

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Stock information temporarily unavailable.

BD 3.675

BD 0.368 Each (In a Pack of 10) (Exc. Vat)

BD 4.043

BD 0.405 Each (In a Pack of 10) (inc. VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK IPI80N06S4L07AKSA2
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10BD 3.675
20BD 7.350
30BD 11.025
40BD 14.700
50BD 18.375
60BD 22.050
70BD 25.725
80BD 29.400
90BD 33.075
100BD 36.750
110BD 40.425
120BD 44.100
130BD 47.775
140BD 51.450
150BD 55.125

BD 3.675

BD 0.368 Each (In a Pack of 10) (Exc. Vat)

BD 4.043

BD 0.405 Each (In a Pack of 10) (inc. VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK IPI80N06S4L07AKSA2
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10BD 3.675
20BD 7.350
30BD 11.025
40BD 14.700
50BD 18.375
60BD 22.050
70BD 25.725
80BD 29.400
90BD 33.075
100BD 36.750
110BD 40.425
120BD 44.100
130BD 47.775
140BD 51.450
150BD 55.125

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.0067 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more