Infineon CoolMOS™ Silicon N-Channel MOSFET, 44 A, 300 V, 3-Pin TO-220 IPP410N30NAKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
300 V
Series
CoolMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.041 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
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BD 112.475
BD 2.250 Each (In a Tube of 50) (Exc. Vat)
BD 123.723
BD 2.475 Each (In a Tube of 50) (inc. VAT)
50
BD 112.475
BD 2.250 Each (In a Tube of 50) (Exc. Vat)
BD 123.723
BD 2.475 Each (In a Tube of 50) (inc. VAT)
50
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
300 V
Series
CoolMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.041 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products