IXYS HiperFET N-Channel MOSFET, 24 A, 1000 V, 4-Pin SOT-227 IXFN24N100

RS Stock No.: 146-1694Brand: IXYSManufacturers Part No.: IXFN24N100
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

1000 V

Series

HiperFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

568 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

25.42mm

Length

38.23mm

Typical Gate Charge @ Vgs

267 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.6mm

Product details

N-channel Power MOSFET, IXYS HiperFET™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Stock information temporarily unavailable.

BD 233.640

BD 23.364 Each (In a Tube of 10) (Exc. Vat)

BD 257.004

BD 25.700 Each (In a Tube of 10) (inc. VAT)

IXYS HiperFET N-Channel MOSFET, 24 A, 1000 V, 4-Pin SOT-227 IXFN24N100

10

Available in multiples of 10
10BD 233.640
20BD 467.280
30BD 700.920
40BD 934.560
50BD 1,168.200
60BD 1,401.840
70BD 1,635.480
80BD 1,869.120
90BD 2,102.760
100BD 2,336.400
110BD 2,570.040
120BD 2,803.680
130BD 3,037.320
140BD 3,270.960
150BD 3,504.600

BD 233.640

BD 23.364 Each (In a Tube of 10) (Exc. Vat)

BD 257.004

BD 25.700 Each (In a Tube of 10) (inc. VAT)

IXYS HiperFET N-Channel MOSFET, 24 A, 1000 V, 4-Pin SOT-227 IXFN24N100
Stock information temporarily unavailable.

10

Available in multiples of 10
10BD 233.640
20BD 467.280
30BD 700.920
40BD 934.560
50BD 1,168.200
60BD 1,401.840
70BD 1,635.480
80BD 1,869.120
90BD 2,102.760
100BD 2,336.400
110BD 2,570.040
120BD 2,803.680
130BD 3,037.320
140BD 3,270.960
150BD 3,504.600

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

1000 V

Series

HiperFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

568 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

25.42mm

Length

38.23mm

Typical Gate Charge @ Vgs

267 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.6mm

Product details

N-channel Power MOSFET, IXYS HiperFET™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more