Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
660 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
38.4 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Height
16.13mm
Minimum Operating Temperature
-55 °C
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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BD 0.420
Each (In a Tube of 10) (Exc. Vat)
BD 0.462
Each (In a Tube of 10) (Including VAT)
Standard
10
BD 0.420
Each (In a Tube of 10) (Exc. Vat)
BD 0.462
Each (In a Tube of 10) (Including VAT)
Standard
10
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
10 - 40 | BD 0.420 | BD 4.200 |
50 - 90 | BD 0.385 | BD 3.850 |
100 - 240 | BD 0.360 | BD 3.600 |
250 - 490 | BD 0.335 | BD 3.350 |
500+ | BD 0.315 | BD 3.150 |
Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
660 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
38.4 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Height
16.13mm
Minimum Operating Temperature
-55 °C
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.