Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3mm
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
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BD 0.020
Each (Supplied on a Reel) (Exc. Vat)
BD 0.022
Each (Supplied on a Reel) (Including VAT)
Production pack (Reel)
100
BD 0.020
Each (Supplied on a Reel) (Exc. Vat)
BD 0.022
Each (Supplied on a Reel) (Including VAT)
Production pack (Reel)
100
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3mm
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details