Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Width
1.4mm
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
BD 3.850
BD 0.038 Each (On a Reel of 100) (Exc. Vat)
BD 4.235
BD 0.042 Each (On a Reel of 100) (inc. VAT)
Standard
100
BD 3.850
BD 0.038 Each (On a Reel of 100) (Exc. Vat)
BD 4.235
BD 0.042 Each (On a Reel of 100) (inc. VAT)
Standard
100
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
100 - 100 | BD 0.038 | BD 3.850 |
200 - 400 | BD 0.033 | BD 3.300 |
500 - 900 | BD 0.028 | BD 2.750 |
1000 - 1900 | BD 0.022 | BD 2.200 |
2000+ | BD 0.022 | BD 2.200 |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Width
1.4mm
Height
1mm
Minimum Operating Temperature
-55 °C
Product details