Dual P-Channel MOSFET, 160 mA, 50 V, 6-Pin SOT-363 Nexperia BSS84AKS,115
Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
160 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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BD 0.030
Each (Supplied as a Tape) (Exc. Vat)
BD 0.033
Each (Supplied as a Tape) (inc. VAT)
Standard
30
BD 0.030
Each (Supplied as a Tape) (Exc. Vat)
BD 0.033
Each (Supplied as a Tape) (inc. VAT)
Standard
30
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
160 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products