Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
131 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 40V to 55V
MOSFET Transistors, NXP Semiconductors
BD 3.885
BD 0.777 Each (In a Pack of 5) (Exc. Vat)
BD 4.273
BD 0.855 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 3.885
BD 0.777 Each (In a Pack of 5) (Exc. Vat)
BD 4.273
BD 0.855 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 10 | BD 0.777 | BD 3.885 |
15 - 70 | BD 0.693 | BD 3.465 |
75 - 370 | BD 0.609 | BD 3.045 |
375 - 745 | BD 0.530 | BD 2.651 |
750+ | BD 0.446 | BD 2.231 |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
131 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details