Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
78 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
26 @ 10 V nC
Width
5.85mm
Number of Elements per Chip
2
Forward Diode Voltage
1.3V
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
BD 0.530
Each (In a Pack of 10) (Exc. Vat)
BD 0.583
Each (In a Pack of 10) (Including VAT)
10
BD 0.530
Each (In a Pack of 10) (Exc. Vat)
BD 0.583
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.530 | BD 5.300 |
100 - 490 | BD 0.440 | BD 4.400 |
500 - 990 | BD 0.355 | BD 3.550 |
1000 - 1490 | BD 0.325 | BD 3.250 |
1500+ | BD 0.325 | BD 3.250 |
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
78 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
26 @ 10 V nC
Width
5.85mm
Number of Elements per Chip
2
Forward Diode Voltage
1.3V
Height
1.05mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Product details