Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
380 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.01mm
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
BD 0.025
Each (Supplied on a Reel) (Exc. Vat)
BD 0.027
Each (Supplied on a Reel) (Including VAT)
100
BD 0.025
Each (Supplied on a Reel) (Exc. Vat)
BD 0.027
Each (Supplied on a Reel) (Including VAT)
100
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
100 - 500 | BD 0.025 | BD 2.500 |
600 - 1400 | BD 0.025 | BD 2.500 |
1500+ | BD 0.020 | BD 2.000 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
380 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.01mm
Product details