Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
16 to 32mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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BD 0.155
Each (In a Pack of 20) (Exc. Vat)
BD 0.171
Each (In a Pack of 20) (Including VAT)
20
BD 0.155
Each (In a Pack of 20) (Exc. Vat)
BD 0.171
Each (In a Pack of 20) (Including VAT)
20
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
20 - 20 | BD 0.155 | BD 3.100 |
40 - 80 | BD 0.120 | BD 2.400 |
100 - 180 | BD 0.090 | BD 1.800 |
200 - 380 | BD 0.080 | BD 1.600 |
400+ | BD 0.075 | BD 1.500 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
16 to 32mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.