Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
130 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.73 x 6.22 x 2.39mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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BD 0.815
Each (Supplied on a Reel) (Exc. Vat)
BD 0.897
Each (Supplied on a Reel) (Including VAT)
5
BD 0.815
Each (Supplied on a Reel) (Exc. Vat)
BD 0.897
Each (Supplied on a Reel) (Including VAT)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 5 | BD 0.815 | BD 4.075 |
10 - 95 | BD 0.790 | BD 3.950 |
100 - 245 | BD 0.770 | BD 3.850 |
250 - 495 | BD 0.750 | BD 3.750 |
500+ | BD 0.735 | BD 3.675 |
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
130 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.73 x 6.22 x 2.39mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.