Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
20µA
Height
6.35mm
Width
2.38mm
Maximum Power Dissipation
20 W
Minimum Operating Temperature
-65 °C
Dimensions
6.73 x 2.38 x 6.35mm
Maximum Operating Temperature
+150 °C
Length
6.73mm
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BD 0.230
Each (In a Tube of 75) (Exc. Vat)
BD 0.253
Each (In a Tube of 75) (inc. VAT)
75
BD 0.230
Each (In a Tube of 75) (Exc. Vat)
BD 0.253
Each (In a Tube of 75) (inc. VAT)
75
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
75 - 75 | BD 0.230 | BD 17.250 |
150 - 300 | BD 0.220 | BD 16.500 |
375+ | BD 0.215 | BD 16.125 |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
20µA
Height
6.35mm
Width
2.38mm
Maximum Power Dissipation
20 W
Minimum Operating Temperature
-65 °C
Dimensions
6.73 x 2.38 x 6.35mm
Maximum Operating Temperature
+150 °C
Length
6.73mm