Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.94mm
Height
0.94mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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BD 0.140
Each (Supplied on a Reel) (Exc. Vat)
BD 0.154
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
BD 0.140
Each (Supplied on a Reel) (Exc. Vat)
BD 0.154
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
50 - 95 | BD 0.140 | BD 0.700 |
100 - 495 | BD 0.130 | BD 0.650 |
500 - 995 | BD 0.115 | BD 0.575 |
1000+ | BD 0.105 | BD 0.525 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.3 x 0.94mm
Height
0.94mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.