Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 5 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
BD 0.425
Each (Supplied on a Reel) (Exc. Vat)
BD 0.467
Each (Supplied on a Reel) (Including VAT)
5
BD 0.425
Each (Supplied on a Reel) (Exc. Vat)
BD 0.467
Each (Supplied on a Reel) (Including VAT)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 20 | BD 0.425 | BD 2.125 |
25 - 120 | BD 0.310 | BD 1.550 |
125 - 620 | BD 0.245 | BD 1.225 |
625 - 1245 | BD 0.220 | BD 1.100 |
1250+ | BD 0.215 | BD 1.075 |
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 5 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Product details