Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
36 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
6.22mm
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 1.952
BD 0.390 Each (In a Pack of 5) (Exc. Vat)
BD 2.147
BD 0.429 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 1.952
BD 0.390 Each (In a Pack of 5) (Exc. Vat)
BD 2.147
BD 0.429 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | BD 0.390 | BD 1.952 |
50 - 95 | BD 0.341 | BD 1.705 |
100 - 495 | BD 0.302 | BD 1.512 |
500 - 995 | BD 0.270 | BD 1.348 |
1000+ | BD 0.248 | BD 1.238 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
36 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
6.22mm
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details