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onsemi P-Channel MOSFET, 11.4 A, 30 V, 8-Pin SOIC NTMS4177PR2G

RS Stock No.: 780-4723Brand: onsemiManufacturers Part No.: NTMS4177PR2G
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Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Stock information temporarily unavailable.

BD 2.940

BD 0.294 Each (In a Pack of 10) (Exc. Vat)

BD 3.234

BD 0.323 Each (In a Pack of 10) (inc. VAT)

onsemi P-Channel MOSFET, 11.4 A, 30 V, 8-Pin SOIC NTMS4177PR2G
Select packaging type

BD 2.940

BD 0.294 Each (In a Pack of 10) (Exc. Vat)

BD 3.234

BD 0.323 Each (In a Pack of 10) (inc. VAT)

onsemi P-Channel MOSFET, 11.4 A, 30 V, 8-Pin SOIC NTMS4177PR2G
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
10 - 20BD 0.294BD 2.940
30 - 90BD 0.226BD 2.258
100 - 190BD 0.184BD 1.838
200 - 390BD 0.178BD 1.785
400+BD 0.178BD 1.785

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more