Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3.2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
2.4 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Height
0.94mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
BD 0.418
BD 0.209 Each (In a Pack of 2) (Exc. Vat)
BD 0.460
BD 0.230 Each (In a Pack of 2) (inc. VAT)
Standard
2
BD 0.418
BD 0.209 Each (In a Pack of 2) (Exc. Vat)
BD 0.460
BD 0.230 Each (In a Pack of 2) (inc. VAT)
Standard
2
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
2 - 58 | BD 0.209 | BD 0.418 |
60 - 118 | BD 0.198 | BD 0.396 |
120 - 198 | BD 0.176 | BD 0.352 |
200 - 498 | BD 0.170 | BD 0.341 |
500+ | BD 0.165 | BD 0.330 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3.2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
2.4 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Height
0.94mm
Minimum Operating Temperature
-55 °C
Product details