Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
166 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.1mm
Length
5.1mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Country of Origin
Malaysia
BD 8.085
BD 0.808 Each (In a Pack of 10) (Exc. Vat)
BD 8.893
BD 0.889 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 8.085
BD 0.808 Each (In a Pack of 10) (Exc. Vat)
BD 8.893
BD 0.889 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.808 | BD 8.085 |
100 - 240 | BD 0.714 | BD 7.140 |
250+ | BD 0.635 | BD 6.352 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
166 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.1mm
Length
5.1mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Country of Origin
Malaysia