Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
5 A dc
Maximum Collector Emitter Voltage
80 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
80 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Height
15.75mm
Minimum Operating Temperature
-65 °C
Dimensions
10.53 x 4.83 x 15.75mm
Maximum Operating Temperature
+150 °C
Length
10.53mm
Width
4.83mm
Maximum Power Dissipation
65 W
Country of Origin
China
BD 13.388
BD 0.268 Each (In a Tube of 50) (Exc. Vat)
BD 14.727
BD 0.295 Each (In a Tube of 50) (inc. VAT)
50
BD 13.388
BD 0.268 Each (In a Tube of 50) (Exc. Vat)
BD 14.727
BD 0.295 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.268 | BD 13.388 |
100 - 450 | BD 0.200 | BD 9.975 |
500 - 950 | BD 0.189 | BD 9.450 |
1000+ | BD 0.189 | BD 9.450 |
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
5 A dc
Maximum Collector Emitter Voltage
80 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
80 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Height
15.75mm
Minimum Operating Temperature
-65 °C
Dimensions
10.53 x 4.83 x 15.75mm
Maximum Operating Temperature
+150 °C
Length
10.53mm
Width
4.83mm
Maximum Power Dissipation
65 W
Country of Origin
China