Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1 A
Maximum Collector Emitter Voltage
-100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.28 x 4.82 x 15.75mm
Maximum Operating Temperature
+150 °C
Product details
General Purpose PNP Transistors, Up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
BD 10.450
BD 0.209 Each (In a Tube of 50) (Exc. Vat)
BD 11.495
BD 0.230 Each (In a Tube of 50) (inc. VAT)
50
BD 10.450
BD 0.209 Each (In a Tube of 50) (Exc. Vat)
BD 11.495
BD 0.230 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.209 | BD 10.450 |
100 - 450 | BD 0.160 | BD 7.975 |
500 - 950 | BD 0.132 | BD 6.600 |
1000+ | BD 0.126 | BD 6.325 |
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1 A
Maximum Collector Emitter Voltage
-100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.28 x 4.82 x 15.75mm
Maximum Operating Temperature
+150 °C
Product details
General Purpose PNP Transistors, Up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.