Technical Document
Specifications
Brand
PanasonicChannel Type
N
Idss Drain-Source Cut-off Current
1 to 3mA
Maximum Drain Gate Voltage
-55V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SMini3 F2 B
Pin Count
3
Dimensions
2 x 1.25 x 0.8mm
Height
0.8mm
Width
1.25mm
Maximum Operating Temperature
+150 °C
Length
2mm
Country of Origin
China
Product details
N-channel JFET, Panasonic
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Stock information temporarily unavailable.
Please check again later.
BD 0.030
Each (On a Reel of 3000) (Exc. Vat)
BD 0.033
Each (On a Reel of 3000) (Including VAT)
3000
BD 0.030
Each (On a Reel of 3000) (Exc. Vat)
BD 0.033
Each (On a Reel of 3000) (Including VAT)
3000
Technical Document
Specifications
Brand
PanasonicChannel Type
N
Idss Drain-Source Cut-off Current
1 to 3mA
Maximum Drain Gate Voltage
-55V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SMini3 F2 B
Pin Count
3
Dimensions
2 x 1.25 x 0.8mm
Height
0.8mm
Width
1.25mm
Maximum Operating Temperature
+150 °C
Length
2mm
Country of Origin
China
Product details
N-channel JFET, Panasonic
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.