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SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW35N65G2VAG

RS Stock No.: 202-5488Brand: STMicroelectronicsManufacturers Part No.: SCTW35N65G2VAG
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.055 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

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BD 7.120

BD 7.120 Each (Exc. Vat)

BD 7.832

BD 7.832 Each (inc. VAT)

SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW35N65G2VAG
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 7.120
2BD 14.240
3BD 21.360
4BD 28.480
5BD 35.600
6BD 42.720
7BD 49.840
8BD 56.960
9BD 64.080
10BD 71.200
11BD 78.320
12BD 85.440
13BD 92.560
14BD 99.680
15BD 106.800

BD 7.120

BD 7.120 Each (Exc. Vat)

BD 7.832

BD 7.832 Each (inc. VAT)

SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW35N65G2VAG
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 7.120
2BD 14.240
3BD 21.360
4BD 28.480
5BD 35.600
6BD 42.720
7BD 49.840
8BD 56.960
9BD 64.080
10BD 71.200
11BD 78.320
12BD 85.440
13BD 92.560
14BD 99.680
15BD 106.800

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.055 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more