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SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTWA30N120

RS Stock No.: 202-5493Brand: STMicroelectronicsManufacturers Part No.: SCTWA30N120
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Transistor Material

SiC

Number of Elements per Chip

1

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BD 318.300

BD 10.610 Each (In a Tube of 30) (Exc. Vat)

BD 350.130

BD 11.671 Each (In a Tube of 30) (inc. VAT)

SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTWA30N120

30

Available in multiples of 30
30BD 318.300
60BD 604.800
90BD 907.200
120BD 1,209.600
150BD 1,512.000
180BD 1,814.400
210BD 2,116.800
240BD 2,419.200
270BD 2,721.600
300BD 3,024.000
330BD 3,326.400
360BD 3,628.800
390BD 3,931.200
420BD 4,233.600
450BD 4,536.000

BD 318.300

BD 10.610 Each (In a Tube of 30) (Exc. Vat)

BD 350.130

BD 11.671 Each (In a Tube of 30) (inc. VAT)

SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTWA30N120
Stock information temporarily unavailable.

30

Available in multiples of 30
30BD 318.300
60BD 604.800
90BD 907.200
120BD 1,209.600
150BD 1,512.000
180BD 1,814.400
210BD 2,116.800
240BD 2,419.200
270BD 2,721.600
300BD 3,024.000
330BD 3,326.400
360BD 3,628.800
390BD 3,931.200
420BD 4,233.600
450BD 4,536.000

Buy in bulk

quantityUnit pricePer Tube
30 - 30BD 10.610BD 318.300
60+BD 10.080BD 302.400

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more