Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
195 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
4.6mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
16.4mm
Country of Origin
China
Stock information temporarily unavailable.
Please check again later.
BD 1.215
Each (In a Pack of 2) (Exc. Vat)
BD 1.337
Each (In a Pack of 2) (Including VAT)
Standard
2
BD 1.215
Each (In a Pack of 2) (Exc. Vat)
BD 1.337
Each (In a Pack of 2) (Including VAT)
Standard
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | BD 1.215 | BD 2.430 |
10 - 18 | BD 1.140 | BD 2.280 |
20 - 48 | BD 1.080 | BD 2.160 |
50 - 98 | BD 1.020 | BD 2.040 |
100+ | BD 0.970 | BD 1.940 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
195 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
4.6mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
16.4mm
Country of Origin
China