Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 8 x 8 HV
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Width
8.1mm
Length
8.1mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
0.9mm
Country of Origin
China
BD 6,402.000
BD 2.134 Each (On a Reel of 3000) (Exc. Vat)
BD 7,042.200
BD 2.347 Each (On a Reel of 3000) (inc. VAT)
3000
BD 6,402.000
BD 2.134 Each (On a Reel of 3000) (Exc. Vat)
BD 7,042.200
BD 2.347 Each (On a Reel of 3000) (inc. VAT)
3000
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 8 x 8 HV
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Width
8.1mm
Length
8.1mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
0.9mm
Country of Origin
China