Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
15.75mm
Typical Gate Charge @ Vgs
172 nC @ 10 V
Width
5.15mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
20.15mm
Country of Origin
China
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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BD 33.450
BD 1.115 Each (In a Tube of 30) (Exc. Vat)
BD 36.795
BD 1.227 Each (In a Tube of 30) (inc. VAT)
30
BD 33.450
BD 1.115 Each (In a Tube of 30) (Exc. Vat)
BD 36.795
BD 1.227 Each (In a Tube of 30) (inc. VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 60 | BD 1.115 | BD 33.450 |
90 - 480 | BD 0.940 | BD 28.200 |
510 - 960 | BD 0.850 | BD 25.500 |
990 - 4980 | BD 0.800 | BD 24.000 |
5010+ | BD 0.685 | BD 20.550 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
15.75mm
Typical Gate Charge @ Vgs
172 nC @ 10 V
Width
5.15mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
20.15mm
Country of Origin
China
Product details