Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
90 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Operating Frequency
3 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
20.15 x 15.75 x 5.15mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
BD 11.550
BD 0.385 Each (In a Tube of 30) (Exc. Vat)
BD 12.705
BD 0.423 Each (In a Tube of 30) (inc. VAT)
30
BD 11.550
BD 0.385 Each (In a Tube of 30) (Exc. Vat)
BD 12.705
BD 0.423 Each (In a Tube of 30) (inc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
30 - 60 | BD 0.385 | BD 11.550 |
90 - 480 | BD 0.280 | BD 8.415 |
510+ | BD 0.253 | BD 7.590 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
90 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Operating Frequency
3 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
20.15 x 15.75 x 5.15mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.