Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
6.5 nC @ 4.5 V
Width
3.4mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Stock information temporarily unavailable.
Please check again later.
BD 0.550
Each (Supplied on a Reel) (Exc. Vat)
BD 0.605
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
5
BD 0.550
Each (Supplied on a Reel) (Exc. Vat)
BD 0.605
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 45 | BD 0.550 | BD 2.750 |
50 - 95 | BD 0.440 | BD 2.200 |
100 - 245 | BD 0.340 | BD 1.700 |
250 - 495 | BD 0.320 | BD 1.600 |
500+ | BD 0.310 | BD 1.550 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
6.5 nC @ 4.5 V
Width
3.4mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details