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N-Channel MOSFET, 79 A, 25 V, 8-Pin SON Texas Instruments CSD16406Q3

RS Stock No.: 914-2939PBrand: Texas InstrumentsManufacturers Part No.: CSD16406Q3
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

25 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

5.8 nC @ 4.5 V

Width

3.4mm

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

1.1mm

Series

NexFET

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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BD 0.355

Each (Supplied on a Reel) (Exc. Vat)

BD 0.391

Each (Supplied on a Reel) (inc. VAT)

N-Channel MOSFET, 79 A, 25 V, 8-Pin SON Texas Instruments CSD16406Q3
Select packaging type

BD 0.355

Each (Supplied on a Reel) (Exc. Vat)

BD 0.391

Each (Supplied on a Reel) (inc. VAT)

N-Channel MOSFET, 79 A, 25 V, 8-Pin SON Texas Instruments CSD16406Q3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Reel
10 - 90BD 0.355BD 3.550
100 - 240BD 0.255BD 2.550
250 - 490BD 0.245BD 2.450
500 - 740BD 0.230BD 2.300
750+BD 0.230BD 2.300

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

25 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

5.8 nC @ 4.5 V

Width

3.4mm

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

1.1mm

Series

NexFET

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more