Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
8 V
Package Type
DSBGA
Mounting Type
Surface Mount
Pin Count
9
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.5mm
Typical Gate Charge @ Vgs
18.9 nC @ 4 V
Width
1.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Height
0.35mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Country of Origin
Philippines
Product details
P-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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BD 0.035
Each (On a Reel of 250) (Exc. Vat)
BD 0.039
Each (On a Reel of 250) (Including VAT)
250
BD 0.035
Each (On a Reel of 250) (Exc. Vat)
BD 0.039
Each (On a Reel of 250) (Including VAT)
250
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
8 V
Package Type
DSBGA
Mounting Type
Surface Mount
Pin Count
9
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.5mm
Typical Gate Charge @ Vgs
18.9 nC @ 4 V
Width
1.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Height
0.35mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Country of Origin
Philippines
Product details