Technical Document
Specifications
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 0.75mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Height
1.1mm
Width
1.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+125 °C
Length
2.9mm
Product details
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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BD 1.300
BD 0.130 Each (In a Pack of 10) (Exc. Vat)
BD 1.430
BD 0.143 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 1.300
BD 0.130 Each (In a Pack of 10) (Exc. Vat)
BD 1.430
BD 0.143 Each (In a Pack of 10) (inc. VAT)
Standard
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.130 | BD 1.300 |
100 - 190 | BD 0.090 | BD 0.900 |
200 - 390 | BD 0.085 | BD 0.850 |
400+ | BD 0.085 | BD 0.850 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 0.75mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Height
1.1mm
Width
1.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+125 °C
Length
2.9mm
Product details
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.