Toshiba TK N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

RS Stock No.: 796-5070Brand: ToshibaManufacturers Part No.: TK100E10N1
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

207 A

Maximum Drain Source Voltage

100 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.1mm

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

BD 1.518

BD 1.518 Each (Exc. Vat)

BD 1.670

BD 1.670 Each (inc. VAT)

Toshiba TK N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 1.518
2BD 3.036
3BD 4.554
4BD 6.072
5BD 7.590
6BD 9.108
7BD 10.626
8BD 12.144
9BD 13.662
10BD 15.180
11BD 16.698
12BD 18.216
13BD 19.734
14BD 21.252
15BD 22.770

BD 1.518

BD 1.518 Each (Exc. Vat)

BD 1.670

BD 1.670 Each (inc. VAT)

Toshiba TK N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 1.518
2BD 3.036
3BD 4.554
4BD 6.072
5BD 7.590
6BD 9.108
7BD 10.626
8BD 12.144
9BD 13.662
10BD 15.180
11BD 16.698
12BD 18.216
13BD 19.734
14BD 21.252
15BD 22.770

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 24BD 1.518
25 - 99BD 1.446
100 - 349BD 1.408
350 - 499BD 1.276
500+BD 1.210

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

207 A

Maximum Drain Source Voltage

100 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.1mm

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more