Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
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BD 0.485
Each (In a Pack of 5) (Exc. Vat)
BD 0.533
Each (In a Pack of 5) (inc. VAT)
5
BD 0.485
Each (In a Pack of 5) (Exc. Vat)
BD 0.533
Each (In a Pack of 5) (inc. VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 0.485 | BD 2.425 |
25 - 45 | BD 0.325 | BD 1.625 |
50 - 120 | BD 0.320 | BD 1.600 |
125 - 245 | BD 0.315 | BD 1.575 |
250+ | BD 0.310 | BD 1.550 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details