Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
BD 5.539
BD 1.108 Each (In a Pack of 5) (Exc. Vat)
BD 6.093
BD 1.219 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 5.539
BD 1.108 Each (In a Pack of 5) (Exc. Vat)
BD 6.093
BD 1.219 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 1.108 | BD 5.539 |
25 - 45 | BD 0.892 | BD 4.462 |
50 - 120 | BD 0.814 | BD 4.069 |
125 - 245 | BD 0.761 | BD 3.806 |
250+ | BD 0.693 | BD 3.465 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details