N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
13.7 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
8.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.35mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Height
4.46mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
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BD 2.125
BD 0.425 Each (In a Pack of 5) (Exc. Vat)
BD 2.337
BD 0.467 Each (In a Pack of 5) (inc. VAT)
5
BD 2.125
BD 0.425 Each (In a Pack of 5) (Exc. Vat)
BD 2.337
BD 0.467 Each (In a Pack of 5) (inc. VAT)
5
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
13.7 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
8.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.35mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Height
4.46mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products