N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W5,S1VX(S
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15.8 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
130 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
43 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
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BD 0.555
Each (In a Pack of 5) (Exc. Vat)
BD 0.611
Each (In a Pack of 5) (inc. VAT)
5
BD 0.555
Each (In a Pack of 5) (Exc. Vat)
BD 0.611
Each (In a Pack of 5) (inc. VAT)
5
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | BD 0.555 | BD 2.775 |
| 25 - 45 | BD 0.345 | BD 1.725 |
| 50+ | BD 0.320 | BD 1.600 |
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15.8 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
130 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
43 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products