Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
80 V
Series
TrenchFET
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.99mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
1.07mm
Country of Origin
China
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BD 7.875
BD 0.315 Each (In a Pack of 25) (Exc. Vat)
BD 8.663
BD 0.347 Each (In a Pack of 25) (inc. VAT)
Standard
25
BD 7.875
BD 0.315 Each (In a Pack of 25) (Exc. Vat)
BD 8.663
BD 0.347 Each (In a Pack of 25) (inc. VAT)
Standard
25
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
25 - 75 | BD 0.315 | BD 7.875 |
100 - 475 | BD 0.240 | BD 6.000 |
500 - 975 | BD 0.210 | BD 5.250 |
1000+ | BD 0.170 | BD 4.250 |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
80 V
Series
TrenchFET
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.99mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
1.07mm
Country of Origin
China