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Vishay N-Channel MOSFET, 5.2 A, 200 V, 3-Pin TO-220AB IRF620PBF

RS Stock No.: 178-0854Brand: VishayManufacturers Part No.: IRF620PBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.2 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.7mm

Length

10.41mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.01mm

Product details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Vishay N-Channel MOSFET, 5.2 A, 200 V, 3-Pin TO-220AB IRF620PBF
P.O.A.Each (Supplied as a Tape) (Exc. Vat)
Stock information temporarily unavailable.

BD 14.175

BD 0.284 Each (In a Tube of 50) (Exc. Vat)

BD 15.593

BD 0.312 Each (In a Tube of 50) (inc. VAT)

Vishay N-Channel MOSFET, 5.2 A, 200 V, 3-Pin TO-220AB IRF620PBF

BD 14.175

BD 0.284 Each (In a Tube of 50) (Exc. Vat)

BD 15.593

BD 0.312 Each (In a Tube of 50) (inc. VAT)

Vishay N-Channel MOSFET, 5.2 A, 200 V, 3-Pin TO-220AB IRF620PBF
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
50 - 50BD 0.284BD 14.175
100 - 200BD 0.247BD 12.338
250+BD 0.220BD 11.025

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
Vishay N-Channel MOSFET, 5.2 A, 200 V, 3-Pin TO-220AB IRF620PBF
P.O.A.Each (Supplied as a Tape) (Exc. Vat)

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.2 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.7mm

Length

10.41mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.01mm

Product details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
Vishay N-Channel MOSFET, 5.2 A, 200 V, 3-Pin TO-220AB IRF620PBF
P.O.A.Each (Supplied as a Tape) (Exc. Vat)